The chemical mechanical planarization (CMP) process is used to planarize both die level and wafer level topography and also to remove overfill metal and metalloid materials that serve as interconnects in an integrated circuit. CMP pads and slurries are used together in combination on a polishing tool multiple times throughout the semiconductor fabrication process.
Slurries are made up of a combination of key additives which enable precise polishing of the wafer surface. Slurries are designed to enable the planarization and material removal such that surface quality and material property integrity is maintained or improved. State-of-the-art polishing slurries enable topography or flatness to be maintained at or less than 300 angstroms across a 300mm wafer. Surface finish of materials, including corrosion sensitive metals, is maintained at the single-digit angstrom level.